Optical properties of CdTe doped Ca

  • V.V. Prokopiv Vasyl Stefanyk Precarpathian National University
  • T.M. Mazur Vasyl Stefanyk Precarpathian National University Ivano-Frankivsk National Technical University of Oil and Gas
  • M.M. Slyotov Yuriy Fedkovych Chernivtsi National University
  • M.P. Mazur Yuriy Fedkovych Chernivtsi National University
  • O.V. Kinzerska Yuriy Fedkovych Chernivtsi National University
  • O.M. Slyotov Yuriy Fedkovych Chernivtsi National University
Keywords: cadmium telluride, isovalent impurity, optical absorption and reflection, intense photoluminescence

Abstract

The optical absorption, reflection and luminescence of CdTe:Ca were studied. It was established that the obtained Ca doped surface layers are characterized by intense photoluminescence from η = 8-10% in the edge region. Radiation is formed due to interband recombination of free charge carriers and the annihilation of excitons bound on isovalent impurities of Ca. The indicated components are observed in the differential optical reflection spectra ω in the surface layer obtained by doping CdTe substrates with an isovalent Ca impurity. It is established that doping causes the formation of p-type conductivity.

References

O. Ermakov, Applied optoelectronics (Technosphere, Moskva, 2004).

V.P. Makhniy, M.M. Slyotov, N.V. Skrypnyk, Ukrainian Journal of Physical Optics 10(1), 54 (2009) (https://doi.org/10.3116/16091833/10/1/54/2009).

D.V. Korbutyak, S.V. Melnichuk, E.V. Korbut, M.M. Borisyuk, Telluride cadmium: home-defective camps and detection authorities ("Ivan Fedorov", Kyiv, 2000).

T. Mazur, V. Prokopiv, L. Turovska, Molecular Crystals and Liquid Crystals 671(1), 85 (2018) (https://doi.org/10.1080/15421406.2018.1542088).

T.M. Mazur, V.P. Makhniy, V.V. Prokopiv, M.M. Slyotov, Journal of Nano- and Electronic Physics, 9(5), 05047 (2017) (https://doi.org/10.21272/jnep.9(5).05047).

V.I. Fistul, Atoms of dopants in semiconductors (state and behavior) (Fizmatlit, Moskva, 2004).

V.P. Makhniy, M.M. Sletov, N.V. Demich., A.M. Sletov, Transactions of Int. scientific conf. "Actual problems of solid state physics." (Ed. Center BSU, Minsk, 2005), 385.

V.P. Makhniy, T.M. Mazur, M.M. Berezovsky, O.V. Kinzerska, V.V. Prokopiv, Physics and Chemistry of Solid State, 19(4), 313 (2018) (https://doi.org/10.15330/pcss.20.4.372-375).

Yu.V. Vorobiev, V.I. Dobrovolsky, V.I. Stryha, Semiconductor research methods (Vyshcha schola, Kyiv, 1988).

M.M. Slyotov, А.M. Slyotov, Journal IAPGOS, 4, 4 (2018).

V.V. Prokopiv, B.S. Dzundza, O.B. Kostyuk, T.M. Mazur, L.V. Turovska, O.M. Matkivskyi, M.V. Deychakivskyi, Physics and Chemistry of Solid State, 20 (4), 372 (2019) (https://doi.org/10.15330/pcss.20.4.372-375).

V.P. Gribkovsky, The theory of absorption and emission of light in semiconductors (Science and technology, Minsk, 1975).

V.I Gavrilenko, A.M. Grekhov, D.V. Korbutyak, V.G. Litovchenko, Optical properties of semiconductors. Directory (Naukova Dumka, Kyiv, 1987).

V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, Acta Physica Polonica A, 122 (6), 1039 (2012).

Era Koh, D.W. Langer, J. Luminescence, (1-2), 514 (1970).

M.M. Slyotov, V.P. Makhniy, A.M. Slyotov, V.V. Kosolovskiy, Telecommunication and Radio Engineering, 73 (10), 909 (2014) (https://doi.org/10.1615/TelecomRadEng.v73.i10.50).

I.V. Horichok, H.Ya. Hurhula, V.V. Prokopiv, M.A. Pylyponiuk, Ukrainian Journal of Physics, 61 (11), 992 (2016) (https://doi.org/10.15407/ujpe61.11.0992).

Published
2020-03-28
How to Cite
Prokopiv, V., Mazur, T., Slyotov, M., Mazur, M., Kinzerska, O., & Slyotov, O. (2020). Optical properties of CdTe doped Ca. Physics and Chemistry of Solid State, 21(1), 52-56. https://doi.org/10.15330/pcss.21.1.52-56
Section
Scientific articles

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