Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe Array

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V.M. Katerynchuk
O.S. Litvin
Z.R. Kudrynskyi
Z.D. Kovalyuk
I.G. Tkachuk
B.V. Kushnir

Abstract

We investigated the photoelectrical properties of the heterojunctions p-GaTe n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

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How to Cite
Katerynchuk, V., Litvin, O., Kudrynskyi, Z., Kovalyuk, Z., Tkachuk, I., & Kushnir, B. (2016). Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe: Array. Physics and Chemistry of Solid State, 17(4), 507–510. https://doi.org/10.15330/pcss.17.4.507-510
Section
Scientific articles

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