View of Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique

Return to Article Details Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique Download Download PDF