View of Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques

Return to Article Details Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques Download Download PDF