@article{Nykoniuk_Panchuk_Solodin_Zakharuk_Fochuk_Kovalets_2017, title={Electrical Instability of CdTe:Si Crystals: Array}, volume={18}, url={https://journals.pnu.edu.ua/index.php/pcss/article/view/1052}, DOI={10.15330/pcss.18.1.29-33}, abstractNote={<p align="justify">Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 10<sup>18</sup> - 10<sup>19</sup> cm<sup>-3</sup>), allowed to classify the studied samples and the conditions under which probably the definite crystal and impurity states are realized. We have found the distinction between 3 type of CdTe:Si crystals: (1) low-resistance p-type crystals with shallow acceptors, in which Si impurity is localized mainly in the large inclusions; (2) semi-insulating crystal with deep acceptors and submicron size dopant precipitates that are source/drain for interstitials Si<sub>i </sub>- shallow donors;  and (3) low-resistance crystals in which the n-type conductivity is provided by shallow donors: Si<sub>i</sub> (and/or Si<sub>Cd</sub>). Therefore the silicon is responsible for n-type conductivity of doped samples, introducing as a donor Si<sub>і</sub> and provides semi-insulating state by forming deep acceptor complexes (Si<sub>Cd</sub><sup>-</sup>V<sub>Cd</sub><sup>2-</sup>)<sup>- </sup>with (Е<sub>v</sub> + 0.65 eV). Besides, the submicron silica precipitates, that have a tendto"dissolution" at relatively low temperatures, can act aselectricallyactive centers.</p>}, number={1}, journal={Physics and Chemistry of Solid State}, author={Nykoniuk, Ye.S. and Panchuk, O.E. and Solodin, S.V. and Zakharuk, Z.I. and Fochuk, P.M. and Kovalets, M.O.}, year={2017}, month={Mar.}, pages={29–33} }