@article{Furs_Hulaj_Shemet_2019, title={Investigation of Electronic Conductivity in PbI2:Hf Single Crystals : Array}, volume={20}, url={https://journals.pnu.edu.ua/index.php/pcss/article/view/1749}, DOI={10.15330/pcss.20.4.396-400}, abstractNote={<p align="justify">A study of the electron-hole conductivity in PbI<sub>2</sub> single crystals doped with Hf (0.2 wt %) was conducted using the Wagner polarization cell method. The influence of the Hf alloying admixture (0.2 mass%) on the nature and parameters of lead diiodide’s electronic conductivity has been analyzed.</p> <p align="justify">Basing on the received current-potential dependences, p-type conductivity of a single crystal PbI<sub>2</sub>:Hf was established. The hole conductivity values (s<sub>р</sub><sup>о</sup>) were determined in the studied temperature range allowing to construct temperature dependence. The s<sub>р</sub><sup>о</sup> value for single crystal PbI<sub>2</sub>:Hf increased responsively to increasing temperature. For PbI<sub>2</sub> and PbI<sub>2</sub>:Hf, a comparative analysis of the electron-hole conductivity was carried out. This investigation allowed determining the activation energy s<sub>р</sub><sup>о</sup> reduction from 0.47 eV to 0.32 eV due to hafnium doping. Consequently, the presence of Hf admixture in PbI<sub>2</sub> crystals causes new impurity acceptor levels located at a distance of 0.64 eV from the upper limit of the valence zone.</p>}, number={4}, journal={Physics and Chemistry of Solid State}, author={Furs, T.V. and Hulaj, O.I. and Shemet, V.Ya.}, year={2019}, month={Dec.}, pages={396–400} }