TY - JOUR AU - Bordun, O.M. AU - Kukharskyy, I.Yo. AU - Medvid, I.I. AU - Tsapovska , Zh.Ya. PY - 2017/03/15 Y2 - 2024/03/29 TI - Edge Absorption of (Y0.06Ga0.94)2O3 Thin Films: Array JF - Physics and Chemistry of Solid State JA - Phys. Chem. Sol. State VL - 18 IS - 1 SE - Scientific articles DO - 10.15330/pcss.18.1.89-93 UR - https://journals.pnu.edu.ua/index.php/pcss/article/view/1089 SP - 89-93 AB - <p align="justify"><span lang="EN-US">Fundamental absorption edge of (Y<sub>0,06</sub>Ga<sub>0,94</sub>)<sub>2</sub>O<sub>3 </sub>thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated using the method of optical spectroscopy. It was established that these films are formed in the monoclinic structure of β-Ga<sub>2</sub>O<sub>3</sub>. The optical band gap of these films is greater than β-Ga<sub>2</sub>O<sub>3</sub> films and is 4.66 eB for films annealed in oxygen atmosphere, 4.77 eV for the films annealed in argon atmosphere and 4.87 eV for the films, restored in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in (Y<sub>0,06</sub>Ga<sub>0,94</sub>)<sub>2</sub>O<sub>3 </sub>films after annealing and after reconstitution in hydrogen was estimated. It was found that the concentration of charge carriers after annealing in oxygen atmosphere is 1.32×10<sup>18</sup> cm<sup>-3</sup>, after annealing in argon atmosphere - 3.41×10<sup>18</sup> cm<sup>-3</sup> and after reconstitution in hydrogen is 5.20×10<sup>18</sup> cm<sup>-3</sup>, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in (Y<sub>0,06</sub>Ga<sub>0,94</sub>)<sub>2</sub>O<sub>3</sub> thin films is caused by Burstein-Moss effect.</span></p> ER -