TY - JOUR AU - Novosyadlyj, S.P. AU - Boyko, S.I. AU - Kotyk , M.V. PY - 2016/12/15 Y2 - 2024/03/28 TI - Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits: Array JF - Physics and Chemistry of Solid State JA - Phys. Chem. Sol. State VL - 17 IS - 4 SE - Scientific articles DO - 10.15330/pcss.17.4.630-636 UR - https://journals.pnu.edu.ua/index.php/pcss/article/view/1240 SP - 630-636 AB - <p align="justify">This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large amount of memory. In addition characteristics of magnetron sputtering devices that can be used to form thinmetallization are given: magnetron sputtering device with a magnetic block rotated by cooling deionized water, which can significantly increase the effectiveness of sputtering; high-frequency magnetron device UMV 2,5 with magnetic system that formed on electromagnets with scanning magnetic field; magnetron sputtering device UVN MDE.P-1250-012 which can be used to form double-sided metallization; magnetron sputtering device based on URM.3.279.05 which can be used to form multilayer contact metallization.</p> ER -