TY - JOUR AU - Druzhinin, A.A. AU - Ostrovskii, I.P. AU - Khoverko, Yu.M. AU - Liakh-Kaguy, N.S. PY - 2020/09/29 Y2 - 2024/03/29 TI - Si-Ge whiskers for thermoelectric sensors design: Array JF - Physics and Chemistry of Solid State JA - Phys. Chem. Sol. State VL - 21 IS - 3 SE - Scientific articles DO - 10.15330/pcss.21.3.399-403 UR - https://journals.pnu.edu.ua/index.php/pcss/article/view/3872 SP - 399-403 AB - <p>The paper deals with studies of thermoelectric properties for Si<sub>1-x</sub>Ge<sub>x</sub> (x=0.01-0.05) whiskers doped with boron during their growth by CVD method. Temperature dependences of the resistance and the Seebeck coefficient for Si<sub>1-x</sub>Ge<sub>x</sub> whiskers were measured in the temperature range 275–550 K. A method for determination of thermoelectric parameters of the whisker was proposed with use of the whisker joints, which allows us to define a ratio of Seebeck coefficient to thermal conductivity a/<em>k</em>. Taking into account the obtained values of Seebeck coefficient, the whisker conductance and estimated values of thermal conductivity, parameter ZT was calculated for the whiskers and consists of 0.15 for T=200<sup>o</sup>C. The obtained value of ZT is in good coincidence with literature data for hop pressed Si-Ge nanocomposites. The humidity sensor was designed base on Si-Ge whiskers.</p> ER -