TY - JOUR AU - Solodin, S. AU - Nikoniuk, Ye. AU - Rarenko, G. AU - Fochuk, P. PY - 2019/07/10 Y2 - 2024/03/29 TI - Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals : Array JF - Physics and Chemistry of Solid State JA - Phys. Chem. Sol. State VL - 20 IS - 2 SE - Scientific articles DO - 10.15330/pcss.20.2.144-148 UR - https://journals.pnu.edu.ua/index.php/pcss/article/view/487 SP - 144-148 AB - <p align="justify">Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation ε<sub>A</sub> = 0.6 (1 + 2х) eV. At 300 K: ρ = (10<sup>8</sup>-10<sup>9</sup>) (Ohm´cm), R<sub>H</sub> = (5×10<sup>9</sup>-5×10<sup>10</sup>) cm<sup>3</sup>/C; mobility of current carriers ~ 50 cm<sup>2</sup> /(V´s).</p> ER -