[1]
Novosiadly, S. et al. 2019. Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications. Physics and Chemistry of Solid State. 20, 3 (Sep. 2019), 311–317. DOI:https://doi.org/10.15330/pcss.20.3.311-317.