Sheliuk, I. et al. 2025. Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques. Physics and Chemistry of Solid State. 26, 4 (Nov. 2025), 760–765. DOI:https://doi.org/10.15330/pcss.26.4.760-765.