NOVOSYADLYY, S.P.; LUTSKY, I.M. Ways to improve the performance of GaAs-sex Schottky transistors (PTSH) and selective-doped heterotransistors (SLGT) for the formation of modern microwave circuits. Physics and Chemistry of Solid State, [S. l.], v. 16, n. 2, p. 413–419, 2015. DOI: 10.15330/pcss.16.2.413-419. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/1695. Acesso em: 21 nov. 2024.