ELISEEV, E. A.; MOROZOVSKA, A. N.; YURCHENKO, L. P.; STRIKHA, M. V. Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?. Physics and Chemistry of Solid State, [S. l.], v. 23, n. 4, p. 705–713, 2022. DOI: 10.15330/pcss.23.4.705-713. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/6262. Acesso em: 23 nov. 2024.