GAIDAR, G. P. Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique. Physics and Chemistry of Solid State, [S. l.], v. 19, n. 1, p. 40–47, 2018. DOI: 10.15330/pcss.19.1.40-47. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/76. Acesso em: 21 nov. 2024.