NOVOSJADLY, S.P.; TERLETSKY, A.I.; FRYK, O.B. Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates. Physics and Chemistry of Solid State, [S. l.], v. 16, n. 2, p. 420–424, 2015. DOI: 10.15330/pcss.16.2.420-424. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/1696. Acesso em: 3 may. 2024.