BALABAI, R.M.; ZALEVSKYI, D.V. SiGe Epitaxial Films with Dislocations for the Switchable Memory: the Accurate First-Principle Calculations. Physics and Chemistry of Solid State, [S. l.], v. 20, n. 3, p. 247–256, 2019. DOI: 10.15330/pcss.20.3.247-256. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/614. Acesso em: 12 jul. 2024.