NOVOSIADLY, S.P.; BENKO, T.H.; KOGUT, I.T. Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications. Physics and Chemistry of Solid State, [S. l.], v. 20, n. 3, p. 311–317, 2019. DOI: 10.15330/pcss.20.3.311-317. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/625. Acesso em: 18 jun. 2024.