Kukurudzіak M.S. The influence of the structure of guard rings on the dark currents of silicon p-i-n photodiodes. Physics and Chemistry of Solid State, [S. l.], v. 24, n. 4, p. 603–609, 2023. DOI: 10.15330/pcss.24.4.603-609. Disponível em: https://journals.pnu.edu.ua/index.php/pcss/article/view/6564. Acesso em: 9 may. 2024.