Balabai, R.M., and D.V. Zalevskyi. “SiGe Epitaxial Films With Dislocations for the Switchable Memory: The Accurate First-Principle Calculations”. Physics and Chemistry of Solid State 20, no. 3 (October 18, 2019): 247–256. Accessed July 12, 2024. https://journals.pnu.edu.ua/index.php/pcss/article/view/614.