Gaidar GP. Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique. Phys. Chem. Sol. State [Internet]. 2018 Mar. 15 [cited 2024 May 5];19(1):40-7. Available from: https://journals.pnu.edu.ua/index.php/pcss/article/view/76