Порівняльний аналіз КМОН- і КНІ КМОН аналогово-цифрових комутаторів  для мікросистем-на-кристалі в екстремальних умовах В ЕКСТРЕМАЛЬНИХ УМОВАХ

Editorial Board PCSS Journal; I. Kohut; O. Samarchuk; A. Prystayko; T. Komaryshyn

doi:10.15330/pcss.27.2.399-404

Authors

I. Kohut Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine
O. Samarchuk Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine
A. Prystayko Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine
T. Komaryshyn Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.27.2.399-404

Keywords:

SOI CMOS technology, analog-digital switch, micro-system-on-chip (MSoC), charge injection, power consumption, high-temperature electronics, electric power, 120 nm process

Abstract

The paper investigates the design and performance of integrated analog-digital switches (ADS) targeted for sensor micro-systems-on-a-chip (MSoC). As modern sensor systems require high accuracy and energy efficiency, the choice of appropriate semiconductor technology becomes highly critical. Modern sensor micro-systems-on-a-chip (MSoC) require high-precision and energy-efficient analog-digital switches (ADS) capable of operating under extreme environmental conditions.

Computer simulations were conducted using 120 nm design rules, accounting for parasitic layout effects, charge injection, and substrate influence. Identical physical layouts for both bulk CMOS and SOI CMOS versions of the devices were developed to ensure a consistent and valid comparison.

The simulation results demonstrate that SOI CMOS switches provide significantly higher linearity and lower leakage currents (in the picoampere range versus nanoamperes). It was established that the power consumption of the SOI-based switch is, on average, 4.5 times lower than its bulk CMOS counterpart across the temperature range from –50 °C to +200 °C. Furthermore, while the bulk CMOS switch fails at temperatures exceeding 175 °C, the SOI CMOS device maintains full functionality up to 200 °C. The results confirm that SOI CMOS structures are the optimal choice for MSoC operating in extreme environments. The proposed three-output switch design effectively converts sinusoidal signals into pulses, making it suitable for biomedical sensors and charge-transfer circuits.

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