Electrophysical Properties of Indium Doped As2(S, Se)3 thin Films

  • I.V. Grytsyshche Institute of Electron Physics, Ukr. Nat. Acad. Sci
  • M.I. Kozak Uzhhorod National University
  • I.I. Chichura Uzhhorod National University
  • A.M. Solomon Institute of Electron Physics, Ukr. Nat. Acad. Sci
  • V.M. Krasilinets Institute of Electron Physics, Ukr. Nat. Acad. Sci
  • V.Yu. Loya Institute of Electron Physics, Ukr. Nat. Acad. Sci
Keywords: chalcogenide glasses, energy activation, modification, thin films

Abstract

The electrical studies of In-doped thin films based glassy As2S3 and As2Se3, determined the energy of activation, the analysis of photovoltaic memory samples.

References

[1] K. K. Shvarc, Fizika opticheskoj zapisi v dijelektrikah i poluprovodnikah (Zinatne, Riga, 1986). Jelektronnye javlenija v hal'kogenidnyh stekloobraznyh poluprovodnikah, pod redakciej
[2] K. D. Cjendina (Nauka, SPb., 1996).
[3] V. Tmovcova, I. Furar, D. Lezal, J. Non-Cryst. Solids, 353, 1311(2007).
[4] T. F. Mazec, N. N. Smirnova, Je. A. Smorgonskaja, V. K. Tihomirov, PZhTF 18(13), 46 (1992).
[5] V. M. Zhiharev, V. Ju. Loja, A. M. Solomon, Ja. V. Gricishhe, Naukovij vіsnik UzhNU. Serіja Fіzika (37), 89 (2015).
[6] G. Z. Vinogradova, Stekloobrazovanie i fazovye ravnovesija v hal'kogenidnyh sistemah (Nauka, Moskva, 1984).
[7] A. Kolobov, S. R. Elliott, Advances in Physics, 44:5, 684 (1991).
[8] K. Dhimakawa, A. Kolobov, S. R. Elliott, Advances in Physics, 44:6, 588 (1995).
Published
2016-12-15
How to Cite
GrytsyshcheI., KozakM., ChichuraI., SolomonA., KrasilinetsV., & LoyaV. (2016). Electrophysical Properties of Indium Doped As2(S, Se)3 thin Films. Physics and Chemistry of Solid State, 17(4), 511-514. https://doi.org/10.15330/pcss.17.4.511-514
Section
Scientific articles

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