Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

  • S.P. Novosyadlyj Vasyl Stefanyk Precarpathian National University
  • S.I. Boyko Vasyl Stefanyk Prekarpathian University
Keywords: bipolar transistor, heterojunction, gallium arsenide

Abstract

This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2. HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW.

References

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Published
2016-06-15
How to Cite
Novosyadlyj, S., & Boyko, S. (2016). Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits. Physics and Chemistry of Solid State, 17(2), 281-285. https://doi.org/10.15330/pcss.17.2.281-285
Section
Scientific articles