Luminescence Centers in Thin Films of ZnGa2O4

Authors

  • O. M. Bordun Ivan Franko National University of Lviv
  • I. Y. Kukharskyy Ivan Franko National University of Lviv
  • B. O. Bordun Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15330/pcss.16.1.74-78

Keywords:

zinc gallate, thin films, luminescence, spectrum, energy levels

Abstract

Photoexcitation spectra and luminescence of thin films of ZnGa2O4 under photo-, cathode and X-ray excitation were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. Emission bands with maximums at 3.35, 2.85, 2.50 and 2.38 eV were referred to the luminescence at the expense of electronic transitions between 4Т2, 4Т1, 2Е and 4А2 terms in octahedral complexes (GaO6)9–. It was proposed an energy level diagram with corresponding electronic transitions in such structure. Luminescence band with maximum at 1.75 eV is attributed to oxygen vacancies.

References

I. Ahmad Md., M. Kottaisamy, N. Rama, M.S. Ramachandra Rao, S.S. Bhattacharya, Scripta Mater. 54(2), 237 (2006).

J. S. Kim, H. L. Park, C. M. Chon, H. S. Moon, T. W. Kim. Solid State Commun. 129(3), 163 (2004).

M.Yu, J.Lin, Y.H.Zhou, S.B.Wang, Materials Letters 56(6), 1007 (2002).

S. M. Chung, S. H. Han, Y. J. Kim, Materials Letters 59(7), 786 (2005).

S.-H. Yang, J. Electr. Mater. 33(1), L1 (2004).

L.Zou, X.Xiang, M.Wei, F.Li, David G.Evans, Inorg. Chem. 47(4) 1361 (2008).

W. Zhang, J. Zhang, Y. Li, AZ. Chen, T. Wang, Appl Surf. Sci. 256(14) 4702 (2010).

P. Dhak, U. K. Gayen, S. Mishra, P. Pramanik, A. Roy, J. Appl. Phys. 106(6) 063721 (2009).

M. Takesada, M. Osada, T. Isobe, J. Phys. Chem. Solids 70(2) 281 (2009).

O. M. Bordun, V. G. Bigdaj, I. I. Kuharskij, Zhurn. prikl. spektr. 80(5) 733 (2013).

X.L. Duan, D.R. Yuan, L.H. Wang, F.P. Yu, X.F. Cheng, Z.Q. Liu, S.S. Yan, J. Cryst. Growth 296(2), 234 (2006).

M.V. Fok, Tr. FIAN 59, 3 (1972).

A.M. Rzhevskij, N.I. Makarevich, P.P. Mardilovich, Kompleks programm dlja matematicheskoj obrabotki opticheskih spektrov na mikro JeVM “Jelektronika D3-28”, preprint In-ta fiziki AN BSSR; № 513 1 (1988).

P. M. Aneesh, K. Mini Krishna, M. K. Jayaraj, J. Electrochem. Soc. 156(3), K33 (2009).

Sh. Itoh, H. Toki, Yo. Sato, K. Morimoto, T. Kishino, J. Electrochem. Soc. 138(5), 1509 (1991).

M. Cao, I. Djerdj, M. Antonietti, M. Niederberger, Chem. Mater. 19(24), 5830 (2007).

K.-W. Park, Y.-H. Yun, S.-Ch Choi, J. Electroceram. 17(2–4), 263 (2006).

S.S. Yi, I.W. Kim, J.S. Bae, B.K. Moon, S.B. Kim, J.H. Jeong, Materials Letters 57(4), 904 (2002).

S.-H. Yang, T.-J. Hsueh, Sh.-J. Chang, J. Electrochem. Soc. 152(11), H191 (2005).

J. S. Kim, H. I. Kang, W. N. Kim, J. I. Kim, J. C. Choi, H. L. Park, G.C. Kim, T.W. Kim, Y.H. Hwang, S.I. Mho, M.-C. Jung, M. Han, Appl. Phys. Lett. 82(13), 2029 (2003).

Published

2015-03-15

How to Cite

Bordun, O. M., Kukharskyy, I. Y., & Bordun, B. O. (2015). Luminescence Centers in Thin Films of ZnGa2O4. Physics and Chemistry of Solid State, 16(1), 74–78. https://doi.org/10.15330/pcss.16.1.74-78

Issue

Section

Scientific articles