Electrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition
DOI:
https://doi.org/10.15330/pcss.19.3.246-253Keywords:
jump conductivity, microcrystal, negative magnetic resistor, spin, cryogenic temperaturesAbstract
Complex research of silicon microcrystals with specific resistance from ρ300K = 0.025 Ohm × cm to ρ300K =
0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectric and modified transition metal nickel at low temperatures to the temperature of liquefied helium
T = 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at low
temperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity in
semiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,
magnetic field, deformation) is proposed.
References
[1]. A.A. Barlian , S.J. Park , V. Mukundan , B.L. Pruitt, Sens Actuators A, 134 (2007) 77–87.
[2]. A. Druzhinin, I. Maryamova, E. Lavitska, Y. Pankov, Sensors and Actuators: A. Physical, 68(1-3) (1998) 229-
233.
[3]. A. Fert, Thin Solid Films, 517, (2008) 2-5.
[4]. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys., 76 (2004) 323.
[5]. D. Sanchez, C. Gould, G. Schmidt and L. W. Molenkamp, IEEE Trans. Electron Devices, 54 (2007) 984 – 990.
[6]. H. W. Wu, C. J. Tsai, and L. J. Chen, Appl.Phys. Let., 90 (2007) 043121.
[7]. E. Durgun, D. Cakir, N. Akman, and S. Ciraci, Phys. Rev. Lett., 99(25) (2007) 256806.
[8]. A. Kamra, B. Ghosh and T. K. Ghosh, J. Appl. Phys., 108 (2010) 054505.
[9]. A. Kaminski, S. Das Sarma, Phys. Rev. B, 68 (2003) 235210.
Electrical Conductivity and Magnetoresistance of Silicon Microstructures…
253
[10]. A. Kaminski, S. Das Sarma, Phys. Rev. Lett., 88 (2002) 247202.
[11]. A. Druzhinin, I. Ostrovskii, Yu. Khoverko, S. Nichkalo, R. Koretskyy, Iu. Kogut, Phys. Status Solidi A, 211(2)
(2014) 504–508.
[12]. S. Yatsukhnenko et al., Nanoscale Research Letters, 78(12), (2017) 1-7.
[13]. Liang Wei-Hua, Ding Xue-Cheng, Chu Li-Zhi, Deng Ze-Chao, Guo Jian-Xin, Wu Zhuan-Hua, Wang YingLong, Acta Phys. Sin., 59(11) (2010) 8071-8077.
[14]. A.A. Druzhinin, I. P. Ostrovskii, Yu. M. Khoverko, Iu. R. Kogut, S. I. Nichkalo, J. K. Warchulska, Journal of
Nanoscience and Nanotechnology, 12 (2012) 8690–8693.
[15]. Anatoly Druzhinin, Igor Ostrovskii, Yuriy Khoverko, Sergij Yatsukhnenko, Journal of Nano Research, 39
(2016) 43–54.
[16]. A.A. Druzhinin, I. P. Ostrovskii, Yu. M. Khoverko, N. S. Liakh-Kaguj and Iu. R. Kogut, Materials Science in
Semiconductor Processing, 14(1) (2011) 18–22.
[17]. A.A. Druzhinin, I. P. Ostrovskii, Yu. M. Khoverko, K. Rogacki et al, Journal of Magnetism and Magnetic
Materials, 393 (2015) 310–315.
[18]. A. Druzhinin, I. Ostrovskii, Y. Khoverko, R. Koretskii, Materials Science in Semiconductor Processing, 40
(2015) 766–771.
[19]. S. Das Sarma, E. H. Hwang, A. Kaminski, Phys. Rev. B, 67 (2003) 155201.
[20]. Antonio Ferreira da Silva, Alexandre Levine and Zahra Sadre Momtaz, Henri Boudinovm, Bo E. Sernelius,
Physical Review B, 91 (2015) 214414.
[21]. A.I. Veygner, A.G. Zabrodski, T.V. Tysnek, Semiconductors, 34(7) (2000) 774–782.
[2]. A. Druzhinin, I. Maryamova, E. Lavitska, Y. Pankov, Sensors and Actuators: A. Physical, 68(1-3) (1998) 229-
233.
[3]. A. Fert, Thin Solid Films, 517, (2008) 2-5.
[4]. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys., 76 (2004) 323.
[5]. D. Sanchez, C. Gould, G. Schmidt and L. W. Molenkamp, IEEE Trans. Electron Devices, 54 (2007) 984 – 990.
[6]. H. W. Wu, C. J. Tsai, and L. J. Chen, Appl.Phys. Let., 90 (2007) 043121.
[7]. E. Durgun, D. Cakir, N. Akman, and S. Ciraci, Phys. Rev. Lett., 99(25) (2007) 256806.
[8]. A. Kamra, B. Ghosh and T. K. Ghosh, J. Appl. Phys., 108 (2010) 054505.
[9]. A. Kaminski, S. Das Sarma, Phys. Rev. B, 68 (2003) 235210.
Electrical Conductivity and Magnetoresistance of Silicon Microstructures…
253
[10]. A. Kaminski, S. Das Sarma, Phys. Rev. Lett., 88 (2002) 247202.
[11]. A. Druzhinin, I. Ostrovskii, Yu. Khoverko, S. Nichkalo, R. Koretskyy, Iu. Kogut, Phys. Status Solidi A, 211(2)
(2014) 504–508.
[12]. S. Yatsukhnenko et al., Nanoscale Research Letters, 78(12), (2017) 1-7.
[13]. Liang Wei-Hua, Ding Xue-Cheng, Chu Li-Zhi, Deng Ze-Chao, Guo Jian-Xin, Wu Zhuan-Hua, Wang YingLong, Acta Phys. Sin., 59(11) (2010) 8071-8077.
[14]. A.A. Druzhinin, I. P. Ostrovskii, Yu. M. Khoverko, Iu. R. Kogut, S. I. Nichkalo, J. K. Warchulska, Journal of
Nanoscience and Nanotechnology, 12 (2012) 8690–8693.
[15]. Anatoly Druzhinin, Igor Ostrovskii, Yuriy Khoverko, Sergij Yatsukhnenko, Journal of Nano Research, 39
(2016) 43–54.
[16]. A.A. Druzhinin, I. P. Ostrovskii, Yu. M. Khoverko, N. S. Liakh-Kaguj and Iu. R. Kogut, Materials Science in
Semiconductor Processing, 14(1) (2011) 18–22.
[17]. A.A. Druzhinin, I. P. Ostrovskii, Yu. M. Khoverko, K. Rogacki et al, Journal of Magnetism and Magnetic
Materials, 393 (2015) 310–315.
[18]. A. Druzhinin, I. Ostrovskii, Y. Khoverko, R. Koretskii, Materials Science in Semiconductor Processing, 40
(2015) 766–771.
[19]. S. Das Sarma, E. H. Hwang, A. Kaminski, Phys. Rev. B, 67 (2003) 155201.
[20]. Antonio Ferreira da Silva, Alexandre Levine and Zahra Sadre Momtaz, Henri Boudinovm, Bo E. Sernelius,
Physical Review B, 91 (2015) 214414.
[21]. A.I. Veygner, A.G. Zabrodski, T.V. Tysnek, Semiconductors, 34(7) (2000) 774–782.
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Published
2019-10-04
How to Cite
Khoverko, Y., & Shcherban , N. (2019). Electrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition . Physics and Chemistry of Solid State, 19(3), 246–253. https://doi.org/10.15330/pcss.19.3.246-253
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