Electrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition

Array

Authors

  • Yu.М. Khoverko National University "Lviv Polytechnic"
  • N.О. Shcherban National University "Lviv Polytechnic"

DOI:

https://doi.org/10.15330/pcss.19.3.246-253

Keywords:

jump conductivity, microcrystal, negative magnetic resistor, spin, cryogenic temperatures

Abstract

Complex research of silicon microcrystals with specific resistance from ρ300K = 0.025 Ohm × cm to ρ300K =
0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectric and modified transition metal nickel at low temperatures to the temperature of liquefied helium
T = 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at low
temperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity in
semiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,
magnetic field, deformation) is proposed.

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Published

2019-10-04

How to Cite

Khoverko, Y., & Shcherban , N. (2019). Electrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition : Array. Physics and Chemistry of Solid State, 19(3), 246–253. https://doi.org/10.15330/pcss.19.3.246-253

Issue

Section

Scientific articles