Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals

  • S. Solodin Yuriy Fedkovych Chernivtsi National University
  • Ye. Nikoniuk National University of Water Management and Nature Resources
  • G. Rarenko Yuriy Fedkovich’ Chernivtsi National University
  • P. Fochuk Yuriy Fedkovich’ Chernivtsi National University, Chernivtsi
Keywords: Cd1-xMnxTe,, solid solutions, electrical properties, Hall effect, Germanium

Abstract

Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).

References

S.A. Gad, M. Boshta, A.M. Moustafa, et al., Solid State Sciences 13, 23 (2011).

Y. Cui, A. Bolotnikov, A. Hossain, et al., Proc. SPIE 7079, 70790N-1 (2008).

W. Liang, K, Qin, J. Zhang, et al., J. Cryst. Growth 419, 123 (2015).

K. Shcherbin, S. Odoulov, Z. Zakharuk, I. Rarenko, Optical Materials 18, 159 (2001).

M. B. Klein, K. Shcherbin, V. Danylyuk, OSA, Washington, DC, 483 (2003).

V. Matlak, Ye. Nykonyuk, A. Savitskyi, K. Tovstyuk, Sov. Phys. Semicond. 6, 1760 (1972).

O.Panchuk, A.Savitskiy, P.Fochuk, et al., J.Cryst. Growth, 197, 607 (1999).

Ye. Nykonyuk, V. Matlak, R. Ivanchuk, A. Savitskyi, in “Fizychna Elektronika” (in Ukrainian), Lviv, Vyshcha Shkola, 8 (1970).

A. Savitskiy, Ye. Nykonyuk, V. Matlak, et al., in Pytannya suchasnoho pryrodoznavstva (in Ukrainian), Lviv, Vyshcha Shkola, 52 (1975).

L. Shcherbak, Ye. Nykonyuk, O. Panchuk, et al., Inorg. Mater. 13, 415 (1977).

C. Scharager, P. Siffert, P. Hoöschl, et al., Phys. Status Solidi (a) 66, 87 (1981).

M. Fiederle, V. Babentsov, J. Franc, et al., J. Cryst. Growth 243, 77 (2002).

B. Farid, Ph.D. Thesis., University D.Diderot, Paris, 2000.

B. Farid, F. Ramaz, O. Panchuk, et al., Opt. Mater., 18, 7 (2001).

E. Rzepka, Y. Marfaing, M. Cuniot, R. Triboulet, Mater. Sci. Eng. B 16, 262 (1993).

B. Fraboni, F. Boscherini, P. Fochuk and A. Cavallini, J. Appl. Phys. 110, 053706 (2011).

P. Feichuk, L. Shcherbak, D. Pluta, et al., Proc. SPIE 3182, 100 (1997).

P. Gorley, O. Parfenyuk, M. Ilashchuk, I. Nikolayevych, Inorg. Mater. 41, 1266 (2005).

F.A. Kröger, Rev. Phys. Appl., 12, 205 (1975).

O. Panchuk, L. Shcherbak, Ye. Nykonyuk, A. Savitskiy, Inorg. Mater. 16, 433 (1980).

O. Panchuk, A. Savitskiy, P. Fochuk, et al., J. Cryst. Growth 197, 607 (1999).

J.E. Jaffe, J. Appl. Phys., 99, 033704 (2006).

Ye. Nikonyuk, Z. Zakharuk, A.Rarenko, et al., Physics and chemistry of solid state 6, 372 (2005).

Z. Zakharuk, A. Rarenko, E. Rybak, et al., Physics and chemistry of solid state 8, 25 (2007).

V. Zayachivsky, M. Kovaletz, N. Kuchma, et al, PTE 5, 211 (1984).

E. Nikonyuk, Z. Zakharuk, A.Rarenko, et al., J. Nano- and Electron. Phys. 7, 04054 (2015).

E. Nikonyuk, Z. Zakharuk, M. Kuchma, et al., Semiconductors 42, 1012 (2008).

K. Zanio. Semicond. аnd Semimet. 13, 235 (1978).

A. Vlasenko, V. Babentsov, S. Svechnykov, et al., FTP 31, 1017 (2001).

P. Zhukovsky, Ya. Partyka, P. Wengerek, et al., FTP 35, 937 (2001).

P. Fochuk, Ye. Nikonyuk, Z. Zakharuk, et al., J. Nano- and Electron. Phys. 8, 04011 (2016).

L.R.Weisberg. J. Appl. Phys. 33, 1817 (1962).

Published
2019-07-10
How to Cite
SolodinS., Nikoniuk Y., RarenkoG., & FochukP. (2019). Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x &lt; 0.1) Crystals . Physics and Chemistry of Solid State, 20(2), 144-148. https://doi.org/10.15330/pcss.20.2.144-148
Section
Scientific articles