Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties


  • Yu.S. Gromovyi V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine
  • L.V. Rashkovetskyi V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine
  • S.V. Plyatsko V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine




passivating coatings, cadmium telluride, thin films, laser epitaxy, low temperature photoluminescence


CdZnTe films were grown by the method of modulated infrared laser deposition at a substrate temperature Tsub ≤ 1200C from appropriate sources on oriented single-crystal substrates Si, GaAs, InSb in the same technological conditions in one technological cycle. Surface morphology and spectra of low-temperature photoluminescence (T = 4.2K) in the energy range from 1.30 to 1.70 eV were studied. Luminescence spectra were analyzed and presented from three different energy regions: from 1.70 eV to 1.60 eV with exciton emission, from 1.60 eV to 1.55 eV by donor-acceptor transitions (DAP) and region A-centers from 1, 55 to 1.40 eV. The presence in the low-temperature photoluminescence spectra of free exciton bands, excitons on the neutral acceptor and neutral donor, and their phonon replicas on CdZnTe/InSb films testifies to the high structural perfection inherent in materials of detector quality with composition corresponding of the CdZnTe-target.


S. Chander, M.S. Dhaka, Thin Solid Films 625, 131 (2017); https://doi.org/10.1016/j.tsf.2017.01.052.

S. Chander, A. Purohit, S.L. Patel, M.S. Dhaka, Phys. E. 89, 29 (2017); https://doi.org/10.1016/j.physe.2017.02.002.

S. Chander, M.S. Dhaka, Sol. Energy 150, 577 (2017); https://doi.org/10.1016/j.solener.2017.05.013.

G.Q. Zha, Y. Lin, D.M. Zeng, T.T. Tan, W.Q. Jie, Appl. Phys. Lett. 106, 062103 (2015); http://dx.doi.org/10.1063/1.4907973.

H.Q. Le, J.L. Ducote, S. Molloi, Med. Phys. 37, 1225 (2010); http://dx.doi.org/10.1118/1.3312435.

C. Li, N. Murase, Chem. Lett., 34(1), 92 (2005); https://doi.org/10.1246/cl.2005.92.

X. Zhao et al., Appl. Phys. Lett. 105(25), 252101 (2014); https://doi.org/10.1063/1.4904993.

C.L. Littler, B.P. Gorman, D.F. Weirauch, P.K. Liao, H.F. Schaake, J. Electron. Mater. 34, 768 (2005); https://doi.org/10.1007/s11664-005-0018-4.

M. Basol, V.K. Kapur, M.L. Ferris, J. Appl. Phys. 66, 1816 (1989); https://doi.org/10.1063/1.344353.

S.N. Alamri, Phys. Status Solidi (a) 200, 352 (2003); https://doi.org/10.1002/pssa.200306691.

Aydinli, A. Compaan, G. Contreras-Puente, A. Mason, Solid State Commun. 80, 465 (1991); https://doi.org/10.1016/0038-1098(91)90051-V.

J. Takahashi, K. Mochizuki, K. Hitomi, T. Shoji, J. Cryst. Growth 269, 419 (2004); https://doi.org/10.1016/j.jcrysgro.2004.05.054.

H. Zhou, D. Zeng, S. Pan, Instrum. Methods Phys. Res. Sect. A: Accel. Spectrom. etect. Assoc. Equip. 698, 81 (2013); https://doi.org/10.1016/j.nima.2012.09.024.

Q. Huda; M.M. Aliyu; M.A. Islam; M.S. Hossain; M.M. Alam; M.R. Karim; M.A.M. Bhuiyan; K. Sopian; N. Amin, (IEEE 39th Photovoltaic Specialists Conference, (PVSC), 2013); https://doi.org/10.1109/PVSC.2013.6744242.

E. Yilmaz; R. Turan; A. Aktağ; Ali Akgöl, 37th IEEE Photovoltaic Specialists Conference (2011); https://doi.org/10.1109/PVSC.2011.6186216.



How to Cite

Gromovyi, Y., Rashkovetskyi, L., & Plyatsko, S. (2022). Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties. Physics and Chemistry of Solid State, 23(1), 154–158. https://doi.org/10.15330/pcss.23.1.154-158



Scientific articles (Physics)