Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element

Authors

  • A.A. Druzhinin Lviv Polytechnic National University
  • I.T. Kogut Vasyl Stefanyk Precarpathian National University
  • V.I. Golota Vasyl Stefanyk Precarpathian National University
  • S.I. Nichkalo Lviv Polytechnic National University
  • Y. M. Khoverko Lviv Polytechnic National University
  • T.G. Benko Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.22.4.729-733

Keywords:

resistive sensor, inverter, MOS transistor, subchannel area, signal, amplitude

Abstract

The use of an integrated sensor element as an addition of inverter, which converts the resistance of a sensitive element into the level of the output pulse signal, is investigated. Inverter circuits with different control options for sub-channel areas of MOS transistors are modeled in the LTSpice program. Based on the simulation results, dependencies graphs of the output signal amplitude on the resistance of a sensitive element and sensor’s sensitivity are drawn, and the shapes of the output signals are shown.

References

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Published

2021-11-26

How to Cite

Druzhinin, A., Kogut, I., Golota, V., Nichkalo, S., Khoverko, Y. M., & Benko, T. (2021). Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element. Physics and Chemistry of Solid State, 22(4), 729–733. https://doi.org/10.15330/pcss.22.4.729-733

Issue

Section

Scientific articles (Technology)