The barrier capacitance of n-SnS2/n-CdIn2Te4 heterojunction


  • O.G. Grushka Yuri Fedjkovych Chernivtsy National University, Chernivtsy, Ukraine
  • S. M. Chupyra Yuri Fedjkovych Chernivtsy National University, Chernivtsy, Ukraine
  • O.M. Myslyuk Yuri Fedjkovych Chernivtsy National University, Chernivtsy, Ukraine
  • O.M. Slyotov Yuri Fedjkovych Chernivtsy National University, Chernivtsy, Ukraine



heterojunction, barrier capacitance, capacitance-voltage characteristic, structural defects


The results of the study of the electrical characteristics of the n-SnS2/n-CdIn2Te4, obtained by a method of deposition over optical contact, have been presented. It is shown that the current-voltage characteristics and the capacitance-voltage (C-V) characteristics are typical for an abrupt heterojunction. The frequency dependence of the C-V characteristic is established, namely, with increasing frequency of alternating voltage, the barrier capacitance decreases, which is due to the presence of intrinsic structural defects and related localized donor states in the band gap of CdIn2Te4. The obtained results are explained by the frequency-dependent recharging processes of deep donor centers.


O.G. Grushka, V.T. Maslyuk, S.M. Chupyra, O.M. Myslyuk, O. M. Slyotov, The influence of γ-irradiation on electrical properties of CdIn2Te4 crystals, Telecommunications and Radio Engineering 78(11), 1027 (2019);

O.G. Grushka, S.M. Chupyra, S.V. Bilichuk, O.A. Parfenyuk, Electronic processes in CdIn2Te4 crystals, Semiconductors 52(8), 973 (2018);

P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky, Electrical properties of n-SnS2/n-CdIn2Te4 heterostructure, Semiconductor Physics. Quantum Electronics and Optoelectronics 13(4), 444 (2010);

V. Riede, H.Neumann, V.Krämer, M.Kittel, Infrared and Raman spectra of CdIn2Te4, Solid State Communication 78(3), 211 (1991);

G.B. Dubrovskii, Crystal structure and electronic spectrum of SnS2, Physics of the Solid State 40, 1557 (1998);

S.S. Ou, S.A. Eshraghi, O.M. Stafsudd, The electronic characteristics of n-type CdIn2Te4, J. Appl. Phys. 57(2), 355 (1985);

B.L. Sharma, R.K. Purochit. Semiconductor heterojunctions (Sov. radio, Moscow, 1979).

D.B. Ananyina, V.L. Bakumenko, A.K. Bonakov, G.G. Grushka, About the characteristics of a n-SnS2-n-Hg3In2Te6 heterojunction formed by deposition over optical contact, Semiconductors 14(12), 2419 (1980). (in Russian).

V.V. Malyutina-Bronskaya, O.A. Grebenschikov, V.B. Zalesski, T.R. Leonova, Analysis of capacitance-voltage haracteristics of ZnO:RE thin films on silicone substrates by the Therman method, Condensed Matter and Interphases 14(4), 433 (2012);

N.A. Kornushkin, N.A. Valishenko, A.P. Kovcavtsev, G.L. Kuryshev, The influence of interface properties and deep levels in the band gap on capacitance-voltage characteristics of InAs-bases Metal-Insulator-Semiconductor structures, Semiconductors 30(5), 914 (1996); (in Russian).

T.G. Kerimova, I.A.Mamedova, Temperature dependence of the photoluminescence of CdIn2Te4, XIV Russian Conference on Physics of Semiconductors (Pero, Moscow, 2019), p. 56. (in Russian).



How to Cite

Grushka, O., Chupyra, S. M., Myslyuk, O., & Slyotov, O. (2022). The barrier capacitance of n-SnS2/n-CdIn2Te4 heterojunction. Physics and Chemistry of Solid State, 23(3), 450–453.



Scientific articles (Physics)

Most read articles by the same author(s)