Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

V.M. Sklyarchuk; Z.I. Zakharuk; M.H. Kolisnyk; А.I. Rarenko; O.F. Sklyarchuk; P.M. Fochuk

doi:10.15330/pcss.20.3.257-263

Authors

V.M. Sklyarchuk Yuriy Fedkovych Chernivtsi National University
Z.I. Zakharuk Yuriy Fedkovich’ Chernivtsi National University
M.H. Kolisnyk Yuriy Fedkovich’ Chernivtsi National University
А.I. Rarenko Yuriy Fedkovich’ Chernivtsi National University
O.F. Sklyarchuk Yuriy Fedkovich’ Chernivtsi National University
P.M. Fochuk Yuriy Fedkovich’ Chernivtsi National University

DOI:

https://doi.org/10.15330/pcss.20.3.257-263

Keywords:

Cd0.9Zn0.1Te:In, ohmic contact, CSLCs, compensation degree, Schottky contact

Abstract

The electrical characteristics of In-doped Cd_0.9Zn_0.1Te (CZT:In) crystals with concentration of С_о = 3,5×10¹⁷ cm^-3, which are used in X- and gamma-radiation detectors, were investigated. CZT:In crystals possess a weakly pronounced n-type conductivity and had a resistivity of (1 ¸ 2)*10⁹ Ohm´cm at 293 K. In/CZT:In/In structures with ohmic contacts and Cr/CZT:In/In structures with Schottky barriers were created on their base. The temperature dependences of the resistivity in investigated material were analyzed and explained. The energy position of the deep level responsible for the material’ dark conductivity was found. Due to the study of the temperature dependencies of currents limited by space-charge and of currents of the ohmic section of the volt-ampere characteristics (I-VC), the compensation degree of CZT:In crystals is determined. It was found that Cr/CZT:In/In structures with a Schottky diode, fabricated on crystals with a lower compensation degree, possessed the best detection properties than similar structures fabricated on crystals with a greater compensation degree.

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