Structural properties of ZnO films obtained on SiC/porous-Si by the method of high frequence magnetron sputtering

Editorial Board PCSS Journal; A.S. Revenko; V.V. Kidalov; O.I. Gudymenko

doi:10.15330/pcss.26.3.699-704

Authors

A.S. Revenko University College Dublin, Belfield, Dublin 4, Ireland
V.V. Kidalov Technical University Dortmund, Experimentelle Physik 2, Germany; Dmytro Motornyi Tavria State Agrotechnological University, Melitopol, Ukraine,
O.I. Gudymenko V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.3.699-704

Keywords:

ZnO, SiC, XRD, por-Si, SEM

Abstract

The morphological and structural properties of ZnO thin films grown by RF magnetron sputtering using a SiC/porous-Si/Si template were studied. The preparation of the ZnO/SiC/porous-Si/Si heterostructure was carried out in two stages: deposition of SiC films by solid-phase epitaxy followed by the deposition of ZnO films by radio frequency magnetron sputtering.

SiC buffer layers on the porous silicon substrate allow for the growth of ZnO films with low residual mechanical stress, measured at -82.3 MPa. A comparative analysis with data from other studies indicates the relatively high quality of the obtained structures.

Keywords. zinc oxide (ZnO), silicon carbide (SiC), porous silicon (por-Si), scanning electron microscopy (SEM), X-ray diffraction (XRD)

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