Investigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress
DOI:
https://doi.org/10.15330/pcss.18.1.34-40Keywords:
silicon, resistivity, uniaxial elastic deformation, tensoresistance, anisotropy parameter of mobilityAbstract
In this work the changes in resistivity of n‑Si with temperature and uniaxial stress X, oriented both in <100> and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of J || X || [100] and J ┴ X || [100] with using the experimental data concerning longitudinal and transverse tenso-resistance. The presence of the n-Si tenso-resistance was found in the conditions of X || J ||[111], i.e., in the absence of the interminimum redistribution of charge carriers. The physical explanation of the results was presented.
References
[1] O. V. Tretiak, V. V. Il’chenko, Physical Principles of Semiconductor Electronics (VPTs “Kyivskyi universytet”, Kyiv, 2011), in Ukrainian.
[2] N. N. Gerasimenko and Yu. N. Parkhomenko, Silicon – Material for Nanoelectronics (Tekhnosfera, Moscow, 2007), in Russian.
[3] Ya. V. Lepikh, Yu. O. Gordiienko, A. O. Druzhynin, Creating Microelectronic Sensors of New Generation for the Intellectual Systems: Monograph (Astroprynt, Odesa, 2010), in Ukrainian.
[4] A. E. Gorin, G. V. Gromova, V. M. Ermakov, P. P. Kogoutyuk, V. V. Kolomoets, P. F. Nasarchuk, L. I. Panasjuk, S. A. Fedosov, Ukr. J. Phys. 56(9), 917 (2011).
[5] G. P. Gaidar, S. V. Berdnichenko, V. G. Vorobyov, V. I. Kochkin, V. F. Lastovetskiy, P. G. Litovchenko, Voprosy atomnoy nauki i tekhniki (Problems of Atomic Science and Technology) 2(102), Ser. Physics of Radiation Effect and Radiation Materials Science (107), 17 (2016).
[6] V. Kolomoets, V. Ermakov, L. Panasyuk, S. Fedosov, B. Orasgulyev, P. Nazarchuk, Physica B: Condensed Matter 417, 46 (2013).
[7] G. P. Gaidar, The Kinetics of Electronic Processes in Si and Ge in the Fields of External Influences: Monograph (LAP LAMBERT Academic Publishing, Saarbrücken, Deutschland, 2015), in Russian.
[8] G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
[9] G. P. Gaidar, Surface Engineering and Applied Electrochemistry 51(2), 188 (2015).
[10] S. I. Budzuliak, Physics and Chemistry of Solid State, 13(1), 34 (2012), in Ukrainian.
[11] G. P. Gaidar, Semiconductor Physics, Quantum Electronics & Optoelectronics 12(4), 324 (2009).
[12] S. V. Luniov, L. I. Panasiuk, S. A. Fedosov, Ukr. J. Phys. 57(6), 636 (2012).
[13] S. A. Fedosov, S. V. Lunev, D. A. Zakharchuk, L. I. Panasyuk, Yu. V. Koval’, Naukovyi Visnyk Volyns’koho Universytetu im. Lesi Ukrainki, Fizychni Nauky (16), 39 (2011), in Ukrainian.
[14] P. I. Baranskii, A. V. Fedosov, G. P. Gaidar, Physical Properties of Silicon and Germanium Crystals in the Fields of Effective External Influence (Nadstyr’e, Lutsk, 2000), in Ukrainian.
[15] A. V. Fedosov, S. V. Luniov, S. A. Fedosov, Fizyka i tekhnika poluprovodnikov 44 (10), 1307 (2010), in Russian.
[16] L. I. Panasjuk, V. V. Kolomojez, V. V. Bozhko, Naukovyi Visnyk Volyns’koho Universytetu im. Lesi Ukrainki, Fizychni Nauky (3), 3 (2012), in Ukrainian.
[2] N. N. Gerasimenko and Yu. N. Parkhomenko, Silicon – Material for Nanoelectronics (Tekhnosfera, Moscow, 2007), in Russian.
[3] Ya. V. Lepikh, Yu. O. Gordiienko, A. O. Druzhynin, Creating Microelectronic Sensors of New Generation for the Intellectual Systems: Monograph (Astroprynt, Odesa, 2010), in Ukrainian.
[4] A. E. Gorin, G. V. Gromova, V. M. Ermakov, P. P. Kogoutyuk, V. V. Kolomoets, P. F. Nasarchuk, L. I. Panasjuk, S. A. Fedosov, Ukr. J. Phys. 56(9), 917 (2011).
[5] G. P. Gaidar, S. V. Berdnichenko, V. G. Vorobyov, V. I. Kochkin, V. F. Lastovetskiy, P. G. Litovchenko, Voprosy atomnoy nauki i tekhniki (Problems of Atomic Science and Technology) 2(102), Ser. Physics of Radiation Effect and Radiation Materials Science (107), 17 (2016).
[6] V. Kolomoets, V. Ermakov, L. Panasyuk, S. Fedosov, B. Orasgulyev, P. Nazarchuk, Physica B: Condensed Matter 417, 46 (2013).
[7] G. P. Gaidar, The Kinetics of Electronic Processes in Si and Ge in the Fields of External Influences: Monograph (LAP LAMBERT Academic Publishing, Saarbrücken, Deutschland, 2015), in Russian.
[8] G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
[9] G. P. Gaidar, Surface Engineering and Applied Electrochemistry 51(2), 188 (2015).
[10] S. I. Budzuliak, Physics and Chemistry of Solid State, 13(1), 34 (2012), in Ukrainian.
[11] G. P. Gaidar, Semiconductor Physics, Quantum Electronics & Optoelectronics 12(4), 324 (2009).
[12] S. V. Luniov, L. I. Panasiuk, S. A. Fedosov, Ukr. J. Phys. 57(6), 636 (2012).
[13] S. A. Fedosov, S. V. Lunev, D. A. Zakharchuk, L. I. Panasyuk, Yu. V. Koval’, Naukovyi Visnyk Volyns’koho Universytetu im. Lesi Ukrainki, Fizychni Nauky (16), 39 (2011), in Ukrainian.
[14] P. I. Baranskii, A. V. Fedosov, G. P. Gaidar, Physical Properties of Silicon and Germanium Crystals in the Fields of Effective External Influence (Nadstyr’e, Lutsk, 2000), in Ukrainian.
[15] A. V. Fedosov, S. V. Luniov, S. A. Fedosov, Fizyka i tekhnika poluprovodnikov 44 (10), 1307 (2010), in Russian.
[16] L. I. Panasjuk, V. V. Kolomojez, V. V. Bozhko, Naukovyi Visnyk Volyns’koho Universytetu im. Lesi Ukrainki, Fizychni Nauky (3), 3 (2012), in Ukrainian.
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Published
2017-03-15
How to Cite
Gaidar, G. (2017). Investigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress. Physics and Chemistry of Solid State, 18(1), 34–40. https://doi.org/10.15330/pcss.18.1.34-40
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Scientific articles
