Investigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress

  • G.P. Gaidar Institute for Nuclear Research of NAS of Ukraine
Keywords: silicon, resistivity, uniaxial elastic deformation, tensoresistance, anisotropy parameter of mobility

Abstract

In this work the changes in resistivity of n‑Si with temperature and uniaxial stress X, oriented both in <100> and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of  J || X || [100] and  J X || [100] with using the experimental data concerning longitudinal and transverse tenso-resistance. The presence of the n-Si tenso-resistance was found in the conditions of  X || J ||[111], i.e., in the absence of the interminimum redistribution of charge carriers. The physical explanation of the results was presented.

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Published
2017-03-15
How to Cite
Gaidar, G. (2017). Investigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress. Physics and Chemistry of Solid State, 18(1), 34-40. https://doi.org/10.15330/pcss.18.1.34-40
Section
Scientific articles