Magneto- and Tensoresistance of the p Ge Compensated Crystals in the Range of Weak, Intermediate and Classically Strong Magnetic Fields

G.P. Gaidar

doi:10.15330/pcss.17.1.43-47

Authors

G.P. Gaidar Institute for Nuclear Research, NAS of Ukraine

DOI:

https://doi.org/10.15330/pcss.17.1.43-47

Keywords:

germanium, compensated crystals, magnetotensoresistance, tensomagnetoresistance

Abstract

On the crystalsof compensatedp‑Ge (with the compensation factor of k = N_Sb/N_Ga = 0.5) the transverse (Н ^ (J // X)) magnetoresistance (within the magnetic fields of 0 < Н £ 22.3 kOe) at fixed values of the mechanical stresses Х_і = 0; 0.2; 0.4; 0.6; 0.9; 1.1; 1.5 GPa were measured at 77 K. These mechanical stresses X created the elastic deformation along the samples, the crystallographic orientation of which coincided with the direction of [100]. Also at fixed magnetic field intensities Н_і = 2; 4; 8; 10; 15; 20; 22.3 kOe the dependencies of resistivity on the mechanical stress X, which coincides with the longitudinal axis of the crystal (X // J // [100]) and changes in the range of 0 £ Х £ 1.5 GPa, were measured. Last dependences characterized by the presence of a minimum in the range of X ~ 0.5 ¸ 0.6 GPa at the minimal magnetic field intensities Н = 2 kOe, which was shifted to the values of X ~ 0.2 ¸ 0.3 GPa with increasing Н up to 22.3 kOe.

References

[1] P. І. Barans'kij, A. V. Fedosov, G. P. Gajdar, Fіzichnі vlastivostі kristalіv kremnіju ta germanіju v poljah efektivnogo zovnіshn'ogo vplivu (Nadstir’ja, Luc'k, 2000).
[2] P. I. Baranskij, I. S. Buda, I. V. Dahovskij, V. V. Kolomoec, Jelektricheskie i gal'vanomagnitnye javlenija v anizotropnyh poluprovodnikah (pod red. P.I. Baranskogo) (Naukova dumka, Kiev, 1977).
[3] P. I. Baranskii, V. V. Kolomoets, Phys. stat. sol. (b) 42(2), K113 (1970).
[4] R. K. Willardson, T. C. Harman, A. C. Beer, Phys. Rev. 96(6), 1512(1954).
[5] P. I. Baranskij, V. V. Bajdakov, I. V. Dahovskij, A. I. Elizarov, FTP 9(8), 1613 (1975).
[6] K. Sugiyama, A. Kobayashi, J. Phys. Soc. Jpn. 18(2), 163 (1963).
[7] K. Sugiyama, J. Phys. Soc. Jpn. 18(10), 1555 (1963).
[8] A. C. Beer, Galvanomagnetic Effects in Semiconductors. Eds. F. Seitz and D. Turnbull. – Supplement 4, Solid State Physics (Academic Press Inc., New York and London, 1963).
[9] P. І. Barans'kij, A. V. Fedosov, G. P. Gajdar, Neodnorіdnostі napіvprovіdnikіv і aktual'nі zadachі mіzhdefektnoї vzaєmodії v radіacіjnіj fіzicі і nanotehnologії. Monografіja (Redakcіjno-vidavnichij vіddіl Luc'kogo derzhavnogo tehnіchnogo unіversitetu, Kiїv Luc'k, 2007).