Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature

  • Leandro Voisin AMTC, Advanced Mining Technology Center and DIMin, University of Chile
  • Makoto Ohtsuka Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
  • Takashi Nakamura Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
  • S. Petrovska National Academy of Science of Ukraine, Frantsevich Institute for Problems of Materials Science
  • B. Ilkiv National Academy of Science of Ukraine, Frantsevich Institute for Problems of Materials Science
  • R. Sergiienko Physico-Technological Institute of Metals and Alloys NAS of Ukraine
Keywords: indium saving indium tin oxide, magnetron sputtering, electric properties, optical properties

Abstract

Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420 µΩcm has been obtained for the thin films deposited in pure Ar and subsequently heat treated at 923 K. The structure of the as-deposited indium saving indium-tin oxide films was amorphous and the crystallinity was improved with increasing heat treatment temperature. An increase in the heat treatment temperature does not enhance the transmittance of the films at oxygen flow rate higher than 0.4 cm3/min.

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Published
2017-03-15
How to Cite
Voisin, L., Ohtsuka, M., Nakamura, T., Petrovska, S., Ilkiv, B., & Sergiienko, R. (2017). Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature. Physics and Chemistry of Solid State, 18(1), 69-74. https://doi.org/10.15330/pcss.18.1.69-74
Section
Scientific articles

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