Influence of the C4H6O6 Concentration in the (NH4)2Cr2O7 HBr C4H6O6 Composition on the Chemical-Dynamic Polishing of the III-V Semiconductors

  • I.V. Levchenko V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
  • G.P. Malanych V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
  • V.M. Tomashyk V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
  • I.B. Stratiychuk V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
Keywords: chemical-dynamic polishing, etching compositions, semiconductors, tartaric acid, chelation effect

Abstract

The paper presents the results of experimental determination of the influence of the initial concentration of tartaric acid on the features of the chemical interaction of InAs, InSb, GaAs and GaSb with (NH4)2Cr2O7‑HBr‑C4H6O6 etching solutions. It was established that C4H6O6 decreases the general crystals dissolution rate because it increases the etching compositions viscosity, and also enhances the polishing properties of the etching solutions. The comparative analysis of the etching mixtures composition changes influence demonstrates that the using of 40 % C4H6O6, in comparison with 27 %, provides the higher quality polishing of the crystals surface.

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Published
2016-12-15
How to Cite
LevchenkoI., MalanychG., TomashykV., & StratiychukI. (2016). Influence of the C4H6O6 Concentration in the (NH4)2Cr2O7 HBr C4H6O6 Composition on the Chemical-Dynamic Polishing of the III-V Semiconductors. Physics and Chemistry of Solid State, 17(4), 604-610. https://doi.org/10.15330/pcss.17.4.604-610
Section
Scientific articles