Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films

O.O. Gavryliuk; O.Yu. Semchuk; B.V. Lytovchenko

doi:10.15330/pcss.16.4.675-678

Authors

O.O. Gavryliuk Chuiko Institute of Surface Chemistry, NASU
O.Yu. Semchuk Chuiko Institute of Surface Chemistry, NASU
B.V. Lytovchenko Chuiko Institute of Surface Chemistry, NASU

DOI:

https://doi.org/10.15330/pcss.16.4.675-678

Keywords:

silicon oxide, nanocrystal, laser annealing, thermal conductivity equation

Abstract

In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiO_xfilms after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-stoichiometric SiO_xfilm after laser annealing. It is shown that temperature 1800 K on a SiO_x surface is sufficient for separating the film material on silicon dioxide and its nanoparticles. IR-investigations confirm this separating.

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