Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films

Authors

  • O.O. Gavryliuk Chuiko Institute of Surface Chemistry, NASU
  • O.Yu. Semchuk Chuiko Institute of Surface Chemistry, NASU
  • B.V. Lytovchenko Chuiko Institute of Surface Chemistry, NASU

DOI:

https://doi.org/10.15330/pcss.16.4.675-678

Keywords:

silicon oxide, nanocrystal, laser annealing, thermal conductivity equation

Abstract

In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiOx films after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-stoichiometric SiOx film after laser annealing. It is shown that temperature 1800 K on a SiOx surface is sufficient for separating the film material on silicon dioxide and its nanoparticles. IR-investigations confirm this separating.

References

T. Inokuma, Y. Wakayama, T. Muramoto, R. Aoki, Y. Kurata, S. Hasegawa, J. Appl. Phys. 83, 2228 (1998).

K. Sato, T. Izumi, M. Iwase, Y. Show, H. Morisaki, T. Yaguchi, T. Kamino, J. Appl. Surf. Sci. 216, 376 (2003).

T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, L. J. Terminello, J. Phys. Rev. Lett. 80, 3803 (1998).

M. Zacharias, J. Bläsing, P. Veit, L. Tsybeskov, K. Hirschman, P. M. Fauchet, J. Appl. Phys. Lett. 74, 2614 (1999).

O. L. Bratus’, A. A. Evtukh, O. S. Lytvyn, M. V. Voitovych, V. О. Yukhymchuk, Semiconductor Physics, J. Semiconductor Phys., Quantum Electronics & Optoelectronics, 14, 247 (2011).

L. Patrone, D. Nelson, V. I. Safarov, M. Sentis, W. Marine, S. Giorgio, J. Appl. Phys. 87, 3829 (2000).

T. Díaz-Becerril, G. García-Salgado, A. Coyopol, E. Rosendo-Andrés, H. Juárez, J. Mater. Sci. Forum. 636-637, 444 (2010).

A. V. Lykov, The theory of thermoconductivity (Vyscha shkola, Moscow, 1967).

О. О. Gavrylyuk, O. Yu. Semchuk, O. L. Bratus, A. A. Evtukh, O. V. Steblova, L. L., J. Appl. Surf. Sci. 302, 213 (2014).

O. O. Gavrylyuk, O. Yu. Semchuk, O. V. Steblova, A. A. Evtukh, L. L. Fedorenko, J. Ukrainian journal of phys. 59, 712 (2014).

O. O. Gavrylyuk, O. Yu. Semchuk, O. V. Steblova, A. A. Evtukh, L. L. Fedorenko, O. L. Bratus, S. O. Zlobin, M. Karlsteen, J. Appl. Surf. Sci. 336, 217 (2015).

O. V. Steblova, A. A. Evtukh, O. L. Bratus’, L. L. Fedorenko, M. V. Voitovych, O. S. Lytvyn, O. O. Gavrylyuk, O. Yu. Semchuk, J. Semiconductor Phys., Quantum Electronics & Optoelectronics 17, 295 (2014).

Downloads

Published

2015-12-15

How to Cite

Gavryliuk, O., Semchuk, O., & Lytovchenko, B. (2015). Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films . Physics and Chemistry of Solid State, 16(4), 675–678. https://doi.org/10.15330/pcss.16.4.675-678

Issue

Section

Scientific articles