Electrical properties of CdTe<Ca> thin layers

Array

Authors

  • V.V. Prokopiv Vasyl Stefanyk Precarpathian National University
  • O.B. Kostyuk Vasyl Stefanyk Precarpathian National University
  • B.S. Dzundza Vasyl Stefanyk Precarpathian National University
  • T.M. Mazur Vasyl Stefanyk Precarpathian National University
  • L.V. Turovska Ivano-Frankivsk NationalMedical University
  • O.M. Matkivskyi Vasyl Stefanyk Precarpathian National University
  • M.V. Deychakivskyi Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.20.4.372-375

Keywords:

conductivity, concentration, point defects, cadmium telluride

Abstract

The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

References

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Published

2019-12-15

How to Cite

Prokopiv, V., Kostyuk, O., Dzundza, B., Mazur, T., Turovska, L., Matkivskyi, O., & Deychakivskyi, M. (2019). Electrical properties of CdTe<Ca> thin layers: Array. Physics and Chemistry of Solid State, 20(4), 372–375. https://doi.org/10.15330/pcss.20.4.372-375

Issue

Section

Scientific articles

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