Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

  • S. P. Novosyadliy Vasyl Stefanyk Precarpathian National University
  • V. M. Lukovkin Vasyl Stefanyk Precarpathian National University
  • R. Melnyk Vasyl Stefanyk Precarpathian National University
  • A. V. Pavlyshyn Vasyl Stefanyk Precarpathian National University
Keywords: electronics, LSI, Schottky FET, modeling, GaAs

Abstract

In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel.

References

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Published
2020-06-15
How to Cite
Novosyadliy, S. P., Lukovkin, V. M., Melnyk, R., & Pavlyshyn, A. V. (2020). Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI. Physics and Chemistry of Solid State, 21(2), 361-364. https://doi.org/10.15330/pcss.21.2.361-364
Section
Scientific articles