Mathematical model of a frequency pressure transducer based on a resonant tunneling diode

O.V. Osadchuk; V.S. Osadchuk; I.A. Osadchuk

doi:10.15330/pcss.23.2.277-284

Authors

O.V. Osadchuk Vinnytsia National Technical University, Vinnytsia, Ukraine
V.S. Osadchuk Vinnytsia National Technical University, Vinnytsia, Ukraine
I.A. Osadchuk Vinnytsia National Technical University, Vinnytsia, Ukraine

DOI:

https://doi.org/10.15330/pcss.23.2.277-284

Keywords:

resonant tunnel diode, pressure, negative differential resistance, frequency, quantum double-barrier heterostructure

Abstract

The paper presents the design of pressure sensor with a frequency output signal that is based on the physical processes in a resonant tunnel diode under the action of pressure. The use of devices with negative differential resistance can significantly simplify the design of pressure sensors in the entire radio frequency range. Depending on the operating modes of the sensor, an output signal can be obtained in the form of harmonic oscillations. Pressure sensor characteristics researches based on complete equivalent circuit diagram resonant tunnel diode, which takes into account its capacitive and inductive properties. A mathematical model of the pressure sensor was developed, upon which the analytical dependences of the change in the elements tunnel resonance diode from pressure have been determined, as well as conversion functions and sensor sensitivity. It is shown that the main contribution to changes in the conversion function and sensor sensitivity is made by the change in the negative differential resistance with the change in pressure. This, in turn, results in different readings of the instrument's output frequency. The sensitivity of the sensor varied from 1.15 kHz/Pa·10⁵ to 14.16 kHz/Pa·10⁵ in the pressure range from 50·10⁵ Pa up to 350·10⁵ Pa.

References

K. Mutamba, M. Flath, A. Sigurdardottir, A. Vogt, H.L. Hartnagel, IEEE Transactions on Instrumentation and Measurement, A GaAs pressure sensor with frequency output based on resonant tunneling diodes 48(6), 1333 (1999): https://doi.org/10.1109/19.816157.

R. Fobelets, G. Borghs, Vounkx, J. Micro-mech. Microend, A GaAs pressure sensor based on resonant tunneling diodes 4, 123 (1994).

J.D. Alberecht, L. Cond, P.P. Ruden, M.I. Nathan, L.L. Smith, J. Appl. Phes, Resonant tunneling in (001) and (111) –oriented III-V double barrier hetorostructures under transverse and longitudinal stress 79(10), 7763 (1996).

V.S. Osadchuk, A.V. Osadchuk, I.A. Osadchuk, Bulletin of the Khmelnitsky National University. Engineering Sciences, Microelectronic pressure transducer with frequency output based on tunneling resonance diode, 1(221), 97 (2015).

I.A. Osadchuk, A.V.nOsadchuk, V.S. Osadchuk, A.O. Semenov, Nanoelectronic Pressure Transducer with a Frequency Output Based on a Resonance Tunnel Diode, Proc of IEEE 15th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET), 25-29.02.2020 (Lviv-Slavske, Ukraine, 2020). P. 452; https://doi.org/10.1109/TCSET49122.2020.235474.

A.V. Osadchuk, I.O. Osadchuk, A.O. Semenov, Journal of Nano- and Electronic Physics,The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance Vol.13, N4 (2021); https://doi.org/10.21272/jnep.13(4).04001.

I.T. Awan, Optical and Transport of pin GaAs-AlAs resonant tunneling diode. PhD thesis (Universidade Federal de São Carlos, Sao Carlos, 2014).

J.M. Martinez-Duart, R.J. Martin-Palma, F. Agullo-Rueda, Nanotechnology for Micro- and Optoelectronics, Technosphere (Moscow, Russia, 2007).

V.E. Borisenko, Physical foundations of nanoelectronics. Part 1 (BSUIR, Minsk, Belarus, 2001).

S.M. Sze, K.Ng. Kwok, Physics of Semiconductor Devices (Wiley-Interscience, Hoboken, USA, 2007).

H. Saadiah, W.M. Jubadi, N. Ahmad, M.H. Jabbar, Journal of Physics: Conf. Series, Resonant Tunneling Diode Design for Oscillator Circuit 1049, 012069 (2018).

A. Carlo, C.A. Di, P. Lugli, Semicond. Sci. Technol., Valley mixing in resonant tunneling diodes with applied hydrostatic pressure 10, 1673 (1995),

J.P. Sun, G.J. Haddad, P. Mazumder, J.N. Schulman, Proceedings of The IEEE, Resonant Tunneling Diodes: Models and Properties 86(4), 641 (1998).

A.V. Osadchuk, V.S. Osadchuk, I.A. Osadchuk, P. Kisała, T. Zyska, A. Annabaev, K. Mussabekov, Przegląd Elektrotechniczny, Radiomeasuring pressure transducer with sensitive MEMS Capacitor R 93(3), 113 (2017).

Tao Wei, Impedance, equivalent circuit and capacitance of double barrier resonant tunneling diode. Simon Fraser University (1994). P. 112.

Ryunosuke Izumi, Takumi Sato, Safumi Suzuki, and Masahiro Asada, AIP Advances, Resonant-tunneling-diode terahertz oscillator with a cylindrical cavity for high-frequency oscillation 9, 085020, (2019); https://doi.org/10.1063/1.5114963.

L. Cong, J.D. Albrecht, M.I. Nathan, and P.P. Ruden, Journal of Applied Physics, Piezoelectric effect in (001)‐ and (111)‐oriented double‐barrier resonant tunneling devices 79, 7770 (1996); https://doi.org/10.1063/1.362382.

W. Yan, A. Page, T. Nguyen‐Dang, Y. Qu, F. Sordo, L. Wei, F. Sorin, Advanced Multimaterial Electronic and Optoelectronic Fibers and Textiles. Advanced Materials 31, 1802348 (2019); https://doi.org/10.1002/adma.201802348.

Changyong Gao, Yong Wang, Zihan Ye, Zhihua Lin, Xing Ma, Qiang He, Advanced Materials, Biomedical Micro‐/Nanomotors: From Overcoming Biological Barriers to In Vivo 2000512 (2020); https://doi.org/10.1002/adma.202000512.

W. Yan, I. Richard, G. Kurtuldu et al., Nat. Nanotechnol., Structured nanoscale metallic glass fibres with extreme aspect ratios 15, 875, (2020); https://doi.org/10.1038/s41565-020-0747-9.