Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip

  • M.V. Kotyk Vasyl Stefanyk Precarpathian National University
  • V.V. Dovgyi Vasyl Stefanyk Precarpathian National University
  • I.T. Kogut Vasyl Stefanyk Prekarpathian University
  • V.I. Holota Vasyl Stefanyk Prekarpathian University
Keywords: silicon-on-insulator, ring generator, sensitive element, sensor microsystem on the chip

Abstract

The paper presents the results of research of frequency and energy characteristics of ring generators on the basis of  siliconon-isolator of the CMOS transistor structures, depending on their circuit design and constructive and technological implementation, design and modeling of the schemes of the primary transformation of information from integral sensitive elements for sensor microsystems-on-crystal

References

E. Sicard, S. Delmas Bendhia, Brooks/Cole Publishing Company 737, (2003).

I. T. Kogut, V. I. Holota, A. A. Druzhinin, V. V. Dovhij, Journal of Nano Research (Switzerland) 39, 228 (2015).

V. Dovhij, V. Holota, I. Kogut, Architecture development and elements simulation of analytical microsystemon-chip with "silicon-on-insulator" structures. Proceedings of the 13th International Conference “TCSET’2016” (Lviv-Slavske, 2016). 368.

A. Druzhinin, Y. Khoverko, V. Dovhij, I. Kogut, V. Holota, Electrical and layouts simulation of analytical microsystem-on-chip elements for high frequence and low temperature applications. UkrMiCo’2016 (Kyiv, 2016). P. 29.

Web-source: http://www.microwind.org.

Published
2018-12-25
How to Cite
Kotyk, M., Dovgyi, V., Kogut, I., & Holota, V. (2018). Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip. Physics and Chemistry of Solid State, 19(4), 358-362. https://doi.org/10.15330/pcss.19.4.358-362
Section
Scientific articles