Vol. 19 No. 4 (2018)

Scientific articles

• Fragments From the History of the Invention of Bi2Те3 and its First Practical Uses

  O.V. Nitsovich, M.V. Serbyn

  297-302

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• A Set of the Important Kinetic Properties of Crystals and Their Dependence on the Charge Carriers’ Scattering Mechanisms

  Ya.S. Budzhak, T. Wacławski

  303-306

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• Determination of Local Strains in a Neighborhood of Cracks in a Welded Seam of Ni-Cr-Fe According to the Power Fourier Spectrum of Kikuchi Patterns

  M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, I.M. Fodchuk, A.R. Kuzmin, V.M. Tkach, K.A. Yuschenko, A.V. Zviagintseva

  307-312

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• Hole Conductivity of Thin Layers of Cadmium Telluride with Li and Ca Impurities

  V.P. Makhniy, T.M. Mazur, M.M. Berezovsky, O.V. Kinzerska, V.V. Prokopiv

  313-315

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• Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds

  I. Romaniv, B. Kuzhel, L. Romaka, V. Pavlyuk

  316-321

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• Phase Equilibria and Photoinduced Changes in the Ag2S–In2S3–Si(Ge)S(Se)2 Systems

  L. Myronchuk, V.P. Sachanyuk, O.V. Parasyuk, O.V. Zamurujeva

  322-330

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• Photoluminescence of Erbium-Doped Glasses 70 Ga2S3 – 30 La2S3

  V.V. Halyan, I.A. Ivashchenko, A.H. Kevshyn, I.D. Olekseyuk, P.V. Tishchenko

  331-335

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• Chemical Ordering in Ni66.7 In33.3 Liquid Alloy

  Z.M. Oliinyk, A.V. Korolyshyn, S.I. Mudry

  336-339

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• On the Use of Thermoelectric Cooling In Cosmetology

  R.R. Kobylianskyi, O.O. Bezpalchuk, V.Yu. Vyhonnyi

  340-344

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• Problem of Selection of Lubricants for ethelene High-Pressure Compressors. 2.Characteristic of object of investigation (review)

  H.O. Sirenko, M.I. Martynyuk, V.P. Svidersky, N.V. Shmaltser, O.V. Kuzyshyn

  345-351

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• Thermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI

  S.P. Novosyadliy, V.M. Gryga, I.I. Kurysh, M.I. Melnyk

  352-357

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• Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip

  M.V. Kotyk, V.V. Dovgyi, I.T. Kogut, V.I. Holota

  358-362

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• Automation of measurements of photoelectric parameters of high-impedance semiconductor films

  B.S. Dzundza, V.V. Prokopiv, T.M. Mazur, L.D. Yurchyshyn

  363-367

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