Features of the origin and propagation of a shock wave in semiconductors during nanosecond laser irradiation

S. Levytskyi; Z. Cao; О. Biriukov

doi:10.15330/pcss.26.1.43-48

Authors

S. Levytskyi V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine
Z. Cao Institute of Physics and Technology, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, Kyiv, Ukraine
О. Biriukov Kyiv Institute of National Guard of Ukraine, Kyiv, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.1.43-48

Keywords:

CdTe, In/CdTe, pulsed laser irradiation, shock wave, doping

Abstract

In this paper, the mechanisms of mass transfer to In/CdTe systems under nanosecond pulsed laser irradiation, which are due to nonstationarity, nonequilibrium, physical and geometric nonlinearity, high speed and simultaneity of various physical processes; in particular, it is a change in the physical state of a solid body, the generation of elastic and shock waves, significant temperature and stress gradients, defect formation, diffusion, and others. The dominant mechanisms and regularities of indium mass transfer in CdTe during nanosecond laser irradiation of the In-CdTe structure were established, taking into account the factors of shock wave origin and propagation, temperature and pressure.

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