Characterization of (As2S3)1-x(Bi2S3)x glasses by DC conductivity

Editorial Board PCSS Journal; I.M. Voynarovych; S.M. Hasynets; V.V. Halyan; S.I. Pavley; V.V. Lopushansky; V.V. Rubish; O.O. Gomonnai

doi:10.15330/pcss.26.3.607-612

Authors

I.M. Voynarovych Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhhorod, Ukraine
S.M. Hasynets Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhhorod, Ukraine
V.V. Halyan Lesya Ukrainka Volyn National University, Lutsk, Ukraine
S.I. Pavley Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhhorod, Ukraine
V.V. Lopushansky Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhhorod, Ukraine
V.V. Rubish Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhhorod, Ukraine
O.O. Gomonnai Uzhhorod National University, Uzhhorod, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.3.607-612

Keywords:

amorphous chalcogenides, DC conductivity, Bi2S3

Abstract

We present DC conductivity measurements of newly synthesised and thermally annealed (As₂S₃)_1-x (Bi₂S₃)_x (0.08 ≤ x ≤ 0.14) glasses. X-ray diffraction measurements show that as-prepared As₂S₃)_1-x(Bi₂S₃)_x glasses were amorphous and after annealing of the samples nucleation and growth of Bi₂S₃ crystallites in an amorphous matrix occurs. Increasing concentration of bismuth sulfide crystalline inclusions leads to an increase in specific conductivity 10-10³S/m, and decrease in activation energy from 1.2 eV for As₂S₃ down to 0.95 eV for (As₂S₃)_1-x(Bi₂S₃)_x with x = 0.14. Recrystallization of bismuth-containing alloys leads to a sharp increase in specific conductivity, and a decrease in the activation energy that can be explained within the framework of the model of micro-inhomogeneous conductivity or by the percolation mechanism.

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