Aharonov-Bohm effect in lens-shaped quantum dots

Editorial Board PCSS Journal; Volodymyr Holovatsky; Olexander Makhanets; Nataliia Holovatska; Ilya Shakun

doi:10.15330/pcss.27.2.428-432

Authors

Volodymyr Holovatsky Yuriy Fedkovich Chernivtsi National University, Chernivtsi, Ukraine
Olexander Makhanets Yuriy Fedkovich Chernivtsi National University, Chernivtsi, Ukraine
Nataliia Holovatska Yuriy Fedkovich Chernivtsi National University, Chernivtsi, Ukraine
Ilya Shakun Yuriy Fedkovich Chernivtsi National University, Chernivtsi, Ukraine

DOI:

https://doi.org/10.15330/pcss.27.2.428-432

Keywords:

nanostructure, semiconductor, quantum dot, quantum nanoring, electric field

Abstract

This study theoretically investigates the Aharonov–Bohm (AB) effect in InAs/GaAs/AlAs lens-shaped quantum dots under constant axial magnetic and transverse electric fields. Electron states are calculated by solving the Schrödinger equation using the finite element method implemented in COMSOL Multiphysics. It is shown that a transverse electric field, applied perpendicular to the dot base, significantly modifies the topology of the ground-state electron wave function, inducing a quasi-ring-like spatial distribution. The formation of this electrically induced state enables the emergence of AB oscillations in an external magnetic field. Increasing the electric field strength modulates the AB oscillation period due to an increase in the effective radius of the quasi-ring state and a reduction of the critical magnetic field. These effects demonstrate the feasibility of electrical control of the AB effect in semiconductor nanostructures.

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