Determination of the Degree of Homogeneity for n Ge Crystals by Measurements of Magnetoresistance in Classically Weak  Magnetic Fields

G. P. Gaidar; P. I. Baranskii

doi:10.15330/pcss.16.3.469-474

Authors

G. P. Gaidar Institute for Nuclear Research of NAS of Ukraine
P. I. Baranskii V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine

DOI:

https://doi.org/10.15330/pcss.16.3.469-474

Keywords:

germanium, degree of homogeneity, resistivity, magnetic field, magnetoresistance

Abstract

In a wide range of values of the resistivity 0.0212 £ r £ 35 Ohm×cm for n‑Ge crystals with known crystallographic orientation the ratio , which was predicted by the theory, was experimentally confirmed. The experimentally measured deviations from the relationship , which are associated with the heterogeneity of the crystals, it is proposed to use for qualitative assessment of the degree of heterogeneity in the spatial distribution of dopants in the samples.

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