Study of thermoelectric parameters of Bi2Te3 semiconductors
DOI:
https://doi.org/10.15330/pcss.26.2.350-357Keywords:
p-type Bi2Te3 semiconductors, thermoelectric parametersAbstract
The investigation of the thermoelectric properties of semiconductors is of paramount importance in contemporary scientific research, particularly in relation to the direct conversion of thermal energy into electrical energy and vice versa. This area of study constitutes a fundamental component of semiconductor physics and significantly contributes to the advancement of related scientific disciplines. Thermoelectric semiconductors are already extensively employed, and their potential applications are anticipated to broaden in the foreseeable future. These semiconductors are essential to a diverse array of systems, including space technology and household appliances. Research in this domain is continuously evolving and expanding, primarily due to the rapid transfer of foundational knowledge to industry, resulting in substantial economic benefits. Consequently, a considerable portion of research is focused on the thermoelectric properties of semiconductors and the development of thermoelectric technologies. In this study, we examined the thermoelectric parameters of P-type Bi2Te3 semiconductors within the temperature range of 291–373 K.
This study examines and compares the thermo-electromotive force (thermoemf), electrical conductivity, thermal conductivity, and Z parameter behavior at elevated temperatures of two types of P-type semiconductors, each synthesized through distinct methodologies, with theoretical predictions. Additionally, the band gap of the semiconductors is calculated based on the temperature-dependent variation of electrical conductivity and is subsequently compared with theoretical values. The findings indicate that the experimental results align with the theoretical data available in the literature, within the established error margins.
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