Effect of Surface Treatment of Single-Crystalline Ge on Its Photoconductivity and Photomodulation of Radiation with frequency of 0.13 THz

Editorial Board PCSS Journal; O. Balaban; R. Bukliv; A. Danylov; B. Venhryn; D. Vynnyk; V. Haiduchok; A. Andrushchak

doi:10.15330/pcss.26.4.802-807

Authors

O. Balaban Lviv Polytechnic National University, Lviv, Ukraine
R. Bukliv Lviv Polytechnic National University, Lviv, Ukraine
A. Danylov Lviv Polytechnic National University, Lviv, Ukraine
B. Venhryn Lviv Polytechnic National University, Lviv, Ukraine
D. Vynnyk Lviv Polytechnic National University, Lviv, Ukraine
V. Haiduchok «Electron-Carat» Scientific-Research Company, Lviv, Ukraine
A. Andrushchak Lviv Polytechnic National University, Lviv, Ukraine

DOI:

https://doi.org/10.15330/pcss.26.4.802-807

Keywords:

Semiconductors, Single-crystal Germanium, Chemical surface etching, Photoconductivity, Terahertz radiation, Photomodulation

Abstract

The influence of mechanical processing as well as ion and chemical surface etching of single-crystal germanium on its photoconductivity and photomodulation properties in the terahertz spectral region was investigated. Relative changes in the conductivity of the material under laser illumination at a wavelength of 660 nm and various irradiation powers were determined. A setup was developed for studying the photomodulation properties of germanium at a frequency of 0.13 THz, and a pronounced increase in the absorption of terahertz radiation was revealed even at low illumination powers.

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