Investigation of the Effect of the Electron-Beam Crucible Zone Melting of Metallurgical Silicon on Refining and Structure Formation of Ingots

O.R. Gokhman; Yu.A. Asnis; N.V. Piskun; I.I. Statkevich; O.A. Velykoivanenko; G.F. Rozynka; A.S. Milenin; V.M. Babych

doi:10.15330/pcss.18.2.228-235

Authors

O.R. Gokhman South Ukrainian National Pedagogical University named after K. D. Ushynsky
Yu.A. Asnis Institute ofElectrowelding named after Ye.О. Paton,NAN of Ukraine
N.V. Piskun Institute ofElectrowelding named after Ye.О. Paton,NAN of Ukraine
I.I. Statkevich Institute of Electrowelding named after Ye.О. Paton,NAN of Ukraine
O.A. Velykoivanenko O.A. Velykoivanenko
G.F. Rozynka Institute ofElectrowelding named after Ye.О. Paton,NAN of Ukraine
A.S. Milenin Institute ofElectrowelding named after Ye.О. Paton,NAN of Ukraine
V.M. Babych Institute of Physics of Semiconductors named after V. Ye. Loshkarev

DOI:

https://doi.org/10.15330/pcss.18.2.228-235

Keywords:

polycrystalline silicon, specific electrical resistance, columnar structure, directional crystallization, electron beam non-crucible zone melting, refining, photoelectric converters

Abstract

The paper presents the results of studies obtained with the development of the technology of electron-beam crucible impregnation of metallurgical silicon. It is shown that refining of silicon from background and dopant impurities in electron-beam crucible-free zone melting occurs by zone purification during melting and as a result of evaporation of impurities from the sample surface. The mathematical model and computational experiment were been performed to determine the temperature gradient at different rates of zone melting. It was found the diapason of temperature gradients, which provides the columnar structure of crystallites and the purification of the samplesdue the melting with the zone recrystallization procedure. The level of the resistivity of the ingots increases at the end.

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